Highly ordered GaN-based nanowire arrays grown on patterned (100) silicon and their optical properties.
نویسندگان
چکیده
Arrays of GaN-based nanowires have been synthesized on patterned silicon without a catalyst. The spatial density, length and average radius of the nanowires can be well-controlled. The GaN core contains two semipolar facets and a controllable polar facet. The nanowire heterostructures exhibit excellent laser behavior.
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ورودعنوان ژورنال:
- Chemical communications
دوره 50 6 شماره
صفحات -
تاریخ انتشار 2014